Tom's Hardware on MSN17d
Samsung unveils 10th Gen V-NAND: 400+ layers, 5.6 GT/s and hybrid bonding
The 10th Gen V-NAND device that Samsung presented at ISSCC is a 3D TLC NAND device with over 400 active layers, a 1 Tb capacity per die, and a 5.6 GT/s interface speed. As the new ...
Design-Reuse4y
Memory Market Not Forecast to Exceed 2018 High of $163.3B until 2022
Strong growth forecast to return to the memory IC market in 2021 (21%) and 2022 (29%). April 28, 2020 -- The most current 2017-2024 forecast for 35 major IC product segments (e.g., DRAM, 16-bit MCUs, ...