SemiQ’s 1,200-V third-generation SiC MOSFET, in a smaller footprint, reduces switching losses in high power applications.

NoMIS Power claims a breakthrough in the short-circuit withstand time of SiC MOSFETs; opens up new opportunities in high power applications.

For some SiC MOSFETs, which commonly feature higher voltage, lower on-resistance and faster switching characteristics than silicon (Si) MOSFETs, sufficient negative voltage cannot be applied ...

However, these power-handling advantages come at a cost. SiC power MOSFETs can cost up to 3X more than the IGBTs currently used throughout the EV. The price difference is driven by the complexity ...