Toshiba has released four 650-V third-generation SiC MOSFETs in compact 8×8-mm DFN packages. The surface-mount DFN reduces ...

AOS Gen3 SiC MOSFETs provide up to a 30% improvement in switching FOM, while maintaining low conduction losses at high-load ...

NoMIS claims significant reductions in on-resistance for its 1.2-kV planar SiC MOSFETs, supporting higher-frequency switching ...

Navitas Semiconductor’s latest GeneSiC MOSFETs exceed AEC-Q101 standards, extending lifetime in automotive and industrial ...

Navitas Semiconductor introduces a new level of reliability to meet the system lifetime requirements of the most demanding automotive and industrial applications. Navitas’ latest generation of 650 V ...

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Navitas’ latest generation of 650 V and 1200 V ‘trench-assisted planar’ SiC MOSFETs combined with an optimized, HV-T2Pak top-side cooled package, delivers the industry’s highest creepage ...

Toshiba Electronic Devices & Storage Corporation ("Toshiba") has launched four 650V silicon carbide (SiC) MOSFETs, equipped with its latest [1] 3rd generation SiC MOSFET chips and housed in a compact ...

SemiQ has announced a family of co-packaged 1200 V SOT-227 MOSFET modules based on its third-generation SiC technology. 1200 V Gen3 SiC MOSFET modules Credit: SemiQ In addition to smaller die sizes, ...

SemiQ is aiming at solar inverters with 1,200V SiC mosfets that are avalanche tested to 800mJ, some co-packaged with silicon carbide Schottky diodes – all have intrinsic reverse diodes. There are four ...