Extreme ultraviolet (EUV) lithography exposed resist patterns can exhibit excessive line edge roughness (LER) and line width roughness (LWR) due to random or shot noise. Increasing the EUV exposure ...

Imec has demonstrated the capability of directed self-assembly (DSA) to pattern line/spaces with a pitch as small as 18nm, using a high-chi block copolymer (high-χ BCP) based process under high volume ...

Some enzymes can chew through synthetic polymers. Researchers would like to harness this ability to etch channels, trenches, and holes into biocompatible materials as a way to fabricate drug delivery ...

Copper’s resistivity depends on its crystal structure, void volume, grain boundaries and material interface mismatch, which becomes more significant at smaller scales. The formation of copper (Cu) ...